Characterization of highly stable mid-IR, GaSb-based laser diodes.
نویسنده
چکیده
Highly stable room-temperature, mid-IR, GaSb-based laser diodes have been characterized at various temperatures and driver currents. Up to 54 mW of output power was demonstrated in a 3150- to 3180-nm-wavelength range with <20-nm FWHM spectral width.
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ورودعنوان ژورنال:
- Optics express
دوره 19 10 شماره
صفحات -
تاریخ انتشار 2011